2SK4066
Ordering number : ENA0225A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4066
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
Load switching applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
Gate-to-Source Voltage
VGSS
±20
V
ID
100
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
V
400
A
1.65
W
Allowable Power Dissipation
PD
90
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
850
mJ
Avalanche Current *2
IAV
70
A
Tc=25°C
Note : *1 VDD=30V, L=200µH, IAV=70A
*2 L≤200µH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
V(BR)DSS
IGSS
VGS(off)
yfs
VDS=10V, ID=1mA
VDS=10V, ID=50A
RDS(on)1
RDS(on)2
ID=50A, VGS=10V
ID=50A, VGS=4V
Marking : K4066
Unit
max
1.2
Gate-to-Source Leakage Current
Static Drain-to-Source On-State Resistance
typ
60
IDSS
Forward Transfer Admittance
Ratings
min
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS= ±16V, VDS=0V
Zero-Gate Voltage Drain Current
Cutoff Voltage
Conditions
V
±10
µA
µA
2.6
V
3.6
4.7
mΩ
4.7
6.6
mΩ
1
51
85
S
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Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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