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部品型式

M29W128GL70N3E

製品説明
仕様・特性

M29W128GH M29W128GL 128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory Features Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional) Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25, 30 ns – Random access: 60 (only available upon customer request) or 70, 80 ns BGA TSOP56 (N) 14 x 20 mm TBGA64 (ZA) 10 x 13 mm BGA FBGA (ZS) 11 x 13 mm Unlock Bypass/Block Erase/Chip Erase/Write to Buffer/Enhanced Buffer Program commands – Faster production/batch programming – Faster block and chip erase Fast program commands – 32 words (64-byte write buffer) VPP/WP pin for fast program and write: protects first or last block regardless of block protection settings Enhanced buffered program commands – 256 words Software protection: – Volatile protection – Non-volatile protection – Password protection Programming time – 16 μs per byte/word typical – Chip program time: 5 s with VPPH and 8 s without VPPH Common flash interface – 64-bit security code Memory organization – M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each 128-word extended memory block – Extra block used as security block or to store additional information Program/erase controller – Embedded byte/word program algorithms Low power consumption – Standby and automatic standby Program/ erase suspend and resume – Read from any block during program suspend – Read and program another block during erase suspend Minimum 100,000 program/erase cycles per block RoHS compliant packages Automotive device grade: Temperature -40 °C to 125 °C (Automotive grade certified) Table 1. Device summary Root part number Device code M29W128GH: uniform, last block protected by VPP /WP 227Eh + 2221h + 2201h M29W128GL: uniform, first block protected by VPP /WP 227Eh + 2221h + 2200h May 2009 Rev 10 1/94 www.numonyx.com 1

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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