1DL41A
TOSHIBA High Efficiency Rectifier (HED)
Silicon Epitaxial Junction Type
1DL41A
Switching Mode Power Supply Applications
•
Unit: mm
Repetitive Peak Reverse Voltage: VRRM = 200 V
•
Average Forward Current: IF (AV) = 1.0 A (Ta = 64°C)
•
Very Fast Reverse-Recovery Time: trr = 35 ns (max)
•
Low Forward Voltage: VFM = 0.98 V (max)
•
Available to Reduce Switching Losses and Output Noise
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
200
V
Average forward current (Ta = 64°C)
IF (AV)
1.0
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
Junction temperature
30 (50 Hz)
A
33 (60 Hz)
Tj
°C
Tstg
Storage temperature range
−40 to 150
−40 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
3-3E1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.225 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 1.0 A
⎯
⎯
0.98
V
Repetitive peak reverse current
IRRM
VRRM = 200 V
⎯
⎯
100
μA
Reverse recovery time
trr
IF = 1 A, di/dt = −30 A/μs
⎯
⎯
35
ns
Forward recovery time
tfr
IF = 1.0 A
⎯
⎯
100
ns
Thermal resistance
Rth (j-a)
Junction to Ambient
⎯
⎯
115
°C/W
Thermal resistance
Rth (j- l )
Junction to Lead
⎯
⎯
45
°C/W
Marking
Abbreviation Code
Lot No.
DLA
Part No.
DLA
Part No. (or abbreviation code)
1DL41A
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-08
