MCC
TM
Micro Commercial Components
2SA733
2SA733-R
2SA733-Q
2SA733-P
2SA733-K
omponents
20736 Marilla Street Chatsworth
!"#
$
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Features
•
•
•
•
Capable of 0.25Watts of Power Dissipation.
Collector-current 0.1A
Collector-base Voltage 60V
Operating and storage junction temperature range: -55OC to +150 OC
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
PNP Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
50
---
---
Vdc
60
---
---
Vdc
5.0
---
---
Vdc
---
---
0.1
uAdc
---
---
0.1
uAdc
B
OFF CHARACTERISTICS
V (BR)CEO
V (BR)CBO
V (BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage
(I C=1.0mAdc, IB =0)
Collector-Base Breakdown Voltage
(I C=5.0uAdc, IE =0)
Emitter-Base Breakdown Voltage
(I E =50uAdc, IC=0)
Collector Cutoff Current
(V CB=60Vdc, IE =0)
Emitter Cutoff Current
(V EB =5.0Vdc, IC=0)
C
ON CHARACTERISTICS
h FE
DC Current Gain
(IC=1.0mAdc, V CE=6.0Vdc)
Collector-Emitter Saturation Voltage
(I C=100mAdc, IB =10mAdc)
V CE(sat)
90
200
600
---
---
0.18
0.3
100
180
---
D
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(I C=10mAdc, V CE=6.0Vdc
f=30MHz)
E
MHz
C
B
G
DIMENSIONS
CLASSIFICATION OF HFE (1)
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.010
MAX
.190
.190
.590
.020
.160
.104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
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Revision: 5
2007/03/01
