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UN1231A

製品説明
仕様・特性

Transistors with built-in Resistor UNR1231 (UN1231), UNR1231A (UN1231A) Silicon NPN epitaxial planar type Unit: mm For amplification of the low frequency 2.5±0.1 (Emitter open) Collector-emitter voltage UNR1231 (1.0) 2.0±0.2 0.45±0.05 Unit VCBO 20 1.25±0.05 0.55±0.1 Rating V UNR1231A (Base open) (0.85) Symbol Collector-base voltage UNR1231 2.4±0.2 1.0±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 60 VCEO UNR1231A 20 3 2 (2.5) V 1 1: Base 2: Collector 3: Emitter M-A1 Package (2.5) 50 Collector current IC Peak collector current ICP Total power dissipation * PT Junction temperature Tj Storage temperature Tstg 4.5±0.1 R 0.9 R 0.7 d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / . • High forward current transfer ratio hFE • M type mold package • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 4.1±0.2 M Di ain sc te on na tin nc ue e/ d ■ Features (1.0) (1.5) 3.5±0.1 (0.4) 6.9±0.1 (1.5) 0.7 A 1.5 A 1.0 W 150 °C −55 to +150 Internal Connection °C C R2 (47 KΩ) E ce /D isc on tin ue Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion R1(1 kΩ) B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit VCBO IC = 10 µA, IE = 0 20 VCEO IC = 1 mA, IB = 0 20 Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 15 V, IB = 0 10 µA Emitter-base cutoff current (Collector open) IEBO VEB = 14 V, IC = 0 0.5 mA hFE VCE = 10 V, IC = 150 mA 2 100  VCE(sat) IC = 500 mA, IB = 5 mA 0.4 V UNR1231 (Emitter open) UNR1231A an Collector-base voltage int UNR1231A Ma (Base open) en Collector-emitter voltage UNR1231 Forward current transfer ratio * Collector-emitter saturation voltage * V 60 V 50 1 800 VCB = 20 V, IE = −20 mA, f = 200 MHz 55 µA Transition frequency fT Input resistance R1 0.7 1 1.3 MHz V Resistance ratio R1/R2 0.016 0.021 0.025  Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Note) The part numbers in the parenthesis show conventional part number. Publication date: October 2003 SJH00005BED 1

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