RN1241~RN1244
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
Unit: mm
For Muting and Switching Applications
High emitter-base voltage
: VEBO = 25v (min)
High reverse hfe
: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)
Low on resistance
: RON = 1Ω (typ.) (IB = 5mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
―
―
2-4E1A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
Ic
300
mA
Collector power dissipation
Pc
300
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01