This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR4221/4222/4223/4224
(UN4221/4222/4223/4224)
Unit: mm
Silicon NPN epitaxial planar type
4.0±0.2
15.6±0.5
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• New S type package, allowing supply with the radial taping
■ Resistance by Part Number
(UN4221)
(UN4222)
(UN4223)
(UN4224)
0.45+0.20
–0.10
(R1)
2.2 kΩ
4.7 kΩ
10 kΩ
2.2 kΩ
Symbol
0.45+0.20
–0.10
(2.5) (2.5)
(R2)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
0.7±0.1
1
2
3
1: Emitter
2: Collector
3: Base
NS-B1 Package
Internal Connection
■ Absolute Maximum Ratings Ta = 25°C
Parameter
(0.8)
0.75 max.
■ Features
UNR4221
UNR4222
UNR4223
UNR4224
7.6
(0.8)
3.0±0.2
For digital circuits
•
•
•
•
2.0±0.2
Rating
R1
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
500
mA
Total power dissipation
PT
300
C
B
mW
Junction temperature
Tj
150
Tstg
−55 to +150
E
°C
Storage temperature
R2
°C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
1.0
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
1.0
µA
Emitter-base
UNR4221
IEBO
VEB = 6 V, IC = 0
5.0
mA
cutoff current
UNR4222
(Collector open)
UNR4223/4224
Forward current
UNR4221
transfer ratio
Conditions
Min
Typ
Max
Unit
2.0
1.0
hFE
VCE = 10 V, IC = 100 mA
40
UNR4222
50
UNR4223/4224
60
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 5 mA
Output voltage high-level
VOH
VCC = 5 V, VB = 0.5 V, RL = 500 Ω
Output voltage low-level
VOL
VCC = 5 V, VB = 3.5 V, RL = 500 Ω
0.25
4.9
V
V
0.2
V
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00021BED
1
