20JL2C41A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED)
SILICON EPITAXIAL TYPE
20JL2C41A
Unit: mm
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
: VRRM = 600 V
Average Output Rectified Current : IO = 20 A
Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max)
Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
600
V
Average Output Rectified Current
IO
20
A
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temparature
Storage Temparature Range
Screw Torque
IFSM
80 (50Hz)
88 (60Hz)
A
Tj
−40~150
°C
Tstg
−40~150
°C
―
0.8
N·m
JEDEC
JEITA
TOSHIBA
Weight: 4.85g
―
―
12−16D1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 10A
―
3.2
V
Repetitive Peak Reverse Current
IRRM
VRRM = 600V
―
100
μA
trr
IF = 2A, di / dt = − 50A / μs
―
35
ns
tfr
IF = 1A
―
100
ns
Total DC, Junction to Case
―
1.5
°C / W
Reverse Recovery time
Forward Recovery time
Thermal Resistance
Rth (j−c)
Note 1: VFM, IRRM, trr, tfr ··· A value applied to one cell.
POLARITY
1
2006-11-08
