MITSUBISHI SEMICONDUCTOR
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
DESCRIPTION
M54534P and M54534FP are six-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
extremely low input-current supply.
PIN CONFIGURATION (TOP VIEW)
STROBE INPUT STB→ 1
16
VCC
IN1→ 2
15 →O1
IN2→ 3
14 →O2
IN3→ 4
13 →O3
IN4→ 5
12 →O4
IN5→ 6
11 →O5
IN6→ 7
10 →O6
GND
9
INPUT
FEATURES
q Medium breakdown voltage (BV CEO ≥ 20V)
q High-current driving (Ic(max) =320mA)
q With clamping diodes
q Wide input voltage range (VI = –25 to +20V)
q Wide operating temperature range (Ta = –20 to +75°C)
q With strobe input
8
OUTPUT
COM COMMON
16P4(P)
Outline 16P2N-A(FP)
CIRCUIT SCHEMATIC (EACH CIRCUIT)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps).
380
VCC
COM
1.6k
INPUT
OUTPUT
20k
FUNCTION
The M54534P and M54534FP each have six circuits consisting of NPN transistors. Each input has a diode and 1.6kΩ
esistor in series. Each input is connected, and each output
is connected spike-killer clamping diode, emitters of each
transistor is connected to GND (pin 8), strobe input is connected to (pin 1), clamping diode is connected COM pin (pin
9) and V CC is connected to the pin 16 in common.
The collector current is 320mA maximum. Collector-emitter
supply voltage is 20V maximum.
M54534FP is enclosed in a molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
GND
STB
STROBE INPUT
The six circuits share the STB, COM, VCC, GND.
The diodes shown by broken line are parasite diodes and must not
be use.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter
Conditions
Supply voltage
Collector-emitter voltage
Output, H
IC
VI
Collector current
Current per circuit output, L
VR
Pd
Input voltage
Strobe input voltage
Clamping diode forward current
Clamping diode reverse voltage
Topr
Power dissipation
Operating temperature
Tstg
Storage temperature
Ta = 25°C, when mounted on board
Ratings
Unit
10
–0.5 ~ +20
V
V
320
–25 ~ +20
mA
V
–0.5~ +20
320
VCC
VCEO
V(STB)
IF
2k
V
mA
20
1.47/1.00
W
–20 ~ +75
°C
–55 ~ +125
°C
V
Aug.1999