IRFP 250
Standard Power MOSFET
VDSS
= 200 V
ID (cont) = 30 A
Ω
RDS(on) = 85 mΩ
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
200
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
30
A
IDM
TC = 25°C, pulse width limited by TJM
120
A
30
A
19
mJ
5
V/ns
IAR
EAR
TC = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
°C
T stg
-55 ... +150
°C
TJ
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
300
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
g
°C
Features
l
150
D = Drain,
TAB = Drain
°C
TJM
G = Gate,
S = Source,
W
-55 ... +150
D (TAB)
l
190
TO-247 AD
l
l
l
VDSS
VGS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
25
250
µA
µA
VGS = 10 V, ID = 18 A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.085
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Advantages
l
TJ = 25°C
TJ = 125°C
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
nA
l
±100
l
V
l
R DS(on)
V
4
Applications
l
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
Test Conditions
l
Symbol
International standard package
JEDEC TO-247 AD
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
92602E(5/96)
1-2
