SD210DE-2/214DE-2
Vishay Siliconix
N-Channel Lateral DMOS FETs
(Available Only In Extended Hi-Rel Flow)
PRODUCT SUMMARY
Part Number
V(BR)DS Min (V)
VGS(th) Max (V)
rDS(on) Max (W)
Crss Max (pF)
tON Max (ns)
SD210DE-2
30
1.5
45 @ VGS = 10 V
0.5
2
SD214DE-2
20
1.5
45 @ VGS = 10 V
0.5
2
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Ultra-High Speed Switching—tON: 1 ns
Ultra-Low Reverse Capacitance: 0.2 pF
Low Guaranteed rDS @ 5 V
Low Turn-On Threshold Voltage
N-Channel Enhancement Mode
High Speed System Performance
Low Insertion Loss at High Frequencies
Low Transfer Signal Loss
Simple Driver Requirement
Single Supply Operation
Fast Analog Switch
Fast Sample-and-Holds
Pixel-Rate Switching
DAC Deglitchers
High-Speed Driver
DESCRIPTION
The SD210DE-2/214DE-2 are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video, and
high-frequency applications. The SD214DE-2 is normally used
for "10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and " voltage
capability from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
TO-206AF
(TO-72)
The SD210DE/214DE are available only in the “–2” extended
hi-rel flow. The Vishay Siliconix “–2” flow complies with the
requirements of MIL-PRF-19500 for JANTX discrete devices.
For similar products see: quad array—SD5000I-2, and Zener
protected—SD211DE-2/213DE-2/215DE-2.
Body
Substrate
(Case)
S
1
4
2
3
D
G
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 V
Gate-Substrate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "30 V
Drain-Source Voltage
(SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 30 V
(SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V
Source-Drain Voltage
Drain-Substrate Voltage
(SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 10 V
(SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V
(SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 30 V
(SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Source-Substrate Voltage
(SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 15 V
(SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 125_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes:
a. Derate 3 mW/_C above 25_C
Applications Information—See Applications Note AN502
Document Number: 70294
S-02889—Rev. E, 21-Dec-00
www.vishay.com
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