MBR20xxCT, MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
TO-220AB
FEATURES
ITO-220AB
2
3
1
1
MBR20xxCT
PIN 1
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
2
MBRF20xxCT
PIN 2
PIN 3
•
•
•
•
•
•
•
CASE
PIN 1
PIN 2
PIN 3
TO-263AB
K
2
TYPICAL APPLICATIONS
1
MBRB20xxCT
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
K
PIN 1
HEATSINK
PIN 2
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.57 V, 0.70 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Dual common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2035CT
MBR2045CT
MBR2060CT
Maximum repetitive peak reverse voltage
VRRM
35
45
60
Working peak reverse voltage
VRWM
35
45
60
Maximum DC blocking voltage
VDC
35
45
UNIT
60
Maximum average forward rectified current
at TC = 135 °C
total device
per diode
20
IF(AV)
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
TJ
-65 to +150
Storage temperature range
TSTG
-65 to +175
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
Operating junction temperature range
V
A
150
1.0
0.5
V/μs
°C
V
Revision: 21-Nov-16
Document Number: 88674
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
