JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SA1837
TO – 220F
TRANSISTOR (PNP)
1. BASE
FEATURES
High Breakdown Voltage
High Transition Frequency
2. COLLECTOR
3. EMITTER
APPLICATIONS
Power Amplifier Applications
Driver Stage Amplifier Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
PC
Collector Power Dissipation
1.5
W
Thermal Resistance From Junction To Ambient
83
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
Parameter
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
-230
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-230
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-230V,IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-1
μA
DC current gain
Collector-emitter saturation voltage
hFE
*
*
VCE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
VCE=-5V, IC=-0.1A
100
320
IC=-0.5A,IB=-50mA
1.5
V
VCE=-5V, IC=-500mA
-1
V
VCE=-10V,IC=-0.1A
70
MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
A,Dec,2010
