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2SD113-M
isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD113 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·Audio power amplifier, power switching applications. ·DC-DC converter and regulator applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL scs .i PARAMETER ww MAX UNIT 100 V 80 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 30 A IE Emitter Current-Continuous -30 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg w Storage Temperature Range isc Website:www.iscsemi.cn
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