PD - 94578A
IRFB17N60K
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
ID
0.35Ω
17A
600V
Benefits
l Smaller TO-220 Package
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Max.
Units
17
11
68
340
2.7
± 30
16
-55 to + 150
A
W
W/°C
V
V/ns
300
°C
10
N
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
330
17
34
mJ
A
mJ
Typ.
Max.
Units
–––
0.50
–––
0.37
–––
58
°C/W
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
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Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
1
8/31/04
IRFB17N60K
1000
100
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
BOTTOM 5.5V
100
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
BOTTOM 5.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
1
0.1
5.5V
10
5.5V
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
100.0
3.0
10.0
T J = 25°C
1.0
0.1
VDS = 100V
20µs PULSE WIDTH
0.0
ID = 17A
2.5
VGS = 10V
2.0
(Normalized)
T J = 150°C
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
1
VDS, Drain-to-Source Voltage (V)
1.5
1.0
0.5
0.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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11.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3