PL
IA
N
■ Video/graphics cards
■ Low capacitance - 3.5 pF
M
■ Cellular phones
■ ESD protection
CO
■ Ethernet - 10/100/100 Base T
■ Protects four lines
*R
oH
S
Applications
■ RoHS compliant*
T
Features
■ USB 2.0 interface
■ DVI interface
CDSOT23-SRV05-4 — Steering Diode TVS Array Combo
General Information
I/O 4
REF
I/O 3
6
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
5
4
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD
protection applications, in compact chip package SOT23-6 size. Bourns® Chip
Diodes conform to JEDEC standards, are easy to handle on standard pick and place
equipment and their flat configuration minimizes roll away.
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and
IEC 61000-4-5 (Surge) requirements.
1
2
3
I/O 1
GND
I/O 2
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Nom.
Max.
Unit
Peak Pulse Current (tp = 8/20 µs)
IPP
30
A
Peak Pulse Power (tp = 8/20 µs) 1
PPP
500
W
Working Peak Reverse Voltage
VWM
5
V
Breakdown Voltage @ 1 mA
VBR
Leakage Current @ VWM
Capacitance
6
V
ID
5
Forward Surge Rating
(1/20 s@ 25 °C, IF = 10 mA)
VF
Clamping Voltage
(per IEC 61000-4-5)
8/20 µs)
3.5
VC
@ IPP = 1 A
@ IPP = 5 A
µA
5
pF
1.5
Cj(SD)
V
12
V
15
ESD Protection (per IEC 61000-4-2)
Contact Discharge
Air Discharge
ESD
8
15
kV
EFT Protection (per IEC 61000-4-4)
@ 5/50 ns
EFT
40
A
Notes:
1. See Peak Pulse Power vs. Pulse Time.
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Operating Temperature
Storage Temperature
Symbol
Min.
Nom.
Max.
Unit
TJ
-55
+25
+150
°C
TSTG
-55
+25
+150
°C
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
