Numonyx® Axcell™ P30-65nm Flash Memory
128-Mbit, 64-Mbit Single Bit per Cell (SBC)
Datasheet
Product Features
High Performance:
Enhanced Security:
— 65ns initial access time for Easy BGA and
QUAD+
— 75ns initial access time for TSOP
— 25ns 8-word asynchronous-page read mode
— 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode
— 4-, 8-, 16- and continuous-word options for
burst mode
— 1.8V Low Power buffered programming at
1.8MByte/s (Typ) using 256-word buffer
— Buffered Enhanced Factory Programming at
3.2MByte/s (typ) using 256-word buffer
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Architecture:
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte array blocks
— Blank Check to verify an erased block
Voltage and Power:
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VCC (core) voltage: 1.7V – 2.0V
VCCQ (I/O) voltage: 1.7V – 3.6V
Standby current: 30µA(Typ)/55µA(Max)
Continuous synchronous read current: 23mA
(Typ)/28mA (Max) at 52MHz
Datasheet
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Absolute write protection: VPP = Vss
Power-transition erase/program lockout
Individual zero-latency block locking
Individual block lock-down capability
Password Access feature
One-Time Programmable Register:
— 64 OTP bits, programmed with unique
information by Numonyx
— 2112 OTP bits, available for customer
programming
Software:
— 20µs (Typ) program suspend
— 20µs (Typ) erase suspend
— Basic Command Set and Extended Function
Interface (EFI) Command Set compatible
— Common Flash Interface capable
Density and Packaging:
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56-Lead TSOP (128-Mbit, 64-Mbit)
64-Ball Easy BGA (128-Mbit, 64-Mbit)
88-Ball QUAD+ Package (128-Mbit)
16-bit wide data bus
Quality and Reliability:
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JESD47E Compliant
Operating temperature: –40°C to +85°C
Minimum 100,000 erase cycles
65nm process technology
Apr 2010
Order Number: 208033-02
