FQP27P06
P-Channel QFET® MOSFET
- 60 V, - 27 A, 70 m
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,
ID = - 13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
S
G
●
●
▶ ▲
●
G
D
TO-220
S
D
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP27P06
-60
-27
IDM
Drain Current
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
A
-19.1
- Continuous (TC = 100°C)
VGSS
Unit
V
A
-108
A
25
V
(Note 2)
560
mJ
Avalanche Current
(Note 1)
-27
A
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
12
-7.0
120
0.8
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
FQP27P06
1.25
Unit
°C/W
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RCS
Thermal Resistance, Case-to-Sink, Typ.
0.5
°C/W
RJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
°C/W
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
1
www.fairchildsemi.com
FQP27P06 P-Channel QFET® MOSFET
March 2013
