DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2369,2370
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications.
FEATURES
• Low on-state resistance
2SK2369: RDS(on) = 0.35 Ω MAX. (VGS = 10 V, ID = 10 A)
2SK2370: RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 10 A)
• Low input capacitance
Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) (2SK2369/2370)
VDSS
450/500
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC)
ID(DC)
±20
A
ID(pulse)
±80
A
Total Power Dissipation (TC = 25°C)
PT1
140
W
Total Power Dissipation (TA = 25°C)
PT2
3.0
W
Channel Temperature
Tch
150
°C
Tstg
−55 to +150
°C
Drain Current (pulse)
Note
Storage Temperature
Single Avalanche Current
Note2
IAS
20
A
Single Avalanche Energy
Note2
EAS
285
mJ
Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13191EJ3V0DS00 (3rd edition)
Date Published November 2006 NS CP(K)
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
1995
