2SK363
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK363
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
•
Unit: mm
High breakdown voltage: VGDS = −40 V
•
High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
•
Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VGDS
−40
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Gate-drain voltage
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = −30 V, VDS = 0
⎯
⎯
−1.0
nA
V (BR) GDS
VDS = 0, IG = −100 μA
−40
⎯
⎯
V
VDS = 10 V, VGS = 0
5.0
⎯
30
mA
VDS = 10 V, ID = 0.1 μA
−0.3
⎯
−1.2
V
IDSS
(Note 1)
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2)
25
60
⎯
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
75
⎯
pF
Reverse transfer capacitance
Crss
VGD = −10 V, ID = 0, f = 1 MHz
⎯
15
⎯
pF
⎯
20
⎯
Ω
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
(Note 2)
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Condition of the typical value IDSS = 15 mA
1
2007-11-01
