CMS01
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CMS01
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
•
•
•
•
Unit: mm
Forward voltage: VFM = 0.37 V (max)
Average forward current: IF (AV) = 3.0 A
Repetitive peak reverse voltage: VRRM = 30 V
Suitable for compact assembly due to small surface-mount package
“M-FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF (AV)
3.0
(Note 1)
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
40 (50 Hz)
A
Junction temperature
Tj
−40~125
°C
Storage temperature
Tstg
−40~150
°C
JEDEC
―
JEITA
―
TOSHIBA
Note 1: Tℓ = 68.6°C: Rectangular waveform (α = 180°), VR = 15 V
3-4E1A
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
VFM (1)
Junction capacitance
Thermal resistance
0.25
⎯
VFM (2)
IFM = 1.0 A
⎯
0.27
⎯
IFM = 3.0 A
⎯
0.33
0.37
IRRM
VRRM = 5 V
⎯
0.15
⎯
IRRM
VRRM = 30 V
⎯
1.8
5.0
VR = 10 V, f = 1.0 MHz
⎯
190
⎯
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
Repetitive peak reverse current
⎯
VFM (3)
Peak forward voltage
IFM = 0.5 A
⎯
⎯
60
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
⎯
⎯
135
⎯
⎯
Unit
16
Cj
Rth (j-a)
⎯
Rth (j-ℓ)
1
V
mA
pF
°C/W
2006-11-13
CMS01
iF – vF
PF (AV) – IF (AV)
100
1.4
10
Average forward power dissipation
PF (AV) (W)
Instantaneous forward current
iF (A)
DC
Tj = 125°C
75°C
25°C
1
1.2
α = 180°
1.0
α = 120°
0.8
α = 60°
0.6
Rectangular
waveform
0.4
0° α 360°
0.2
Conduction angle: α
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Instantaneous forward voltage vF
0.0
0.0
0.8
0.6
(V)
1.2
1.8
Average forward current
Tℓ max – IF (AV)
3.0
3.6
4.2
4.8
IF (AV) (A)
Cj – VR
(typ.)
1000
140
f = 1 MHz
120
Ta = 25°C
Cj (pF)
DC
100
α = 180°
80
60
α = 120°
40
0° α 360°
IF (AV)
Conduction angle: α
VR = 15 V
α = 60°
20
0
0.0
Junction capacitance
Rectangular
waveform
0.6
1.2
1.8
2.4
Average forward current
3.0
3.6
4.2
100
4.8
10
1
IF (AV) (A)
10
Reverse voltage
100
VR
(V)
rth (j-a) – t
Transient thermal impedance rth (j-a) (°C/W)
Maximum allowable lead temperature
Tℓ max (°C)
2.4
500
Device mounted on a glass-epoxy board
Soldering land: 2.1 mm × 1.4 mm
100
Device mounted on a glass-epoxy board
Soldering land: 6.0 mm × 6.0 mm
10
Device mounted on a ceramic board
Soldering land: 2.0 mm × 2.0 mm
1
0.5
0.001
0.01
0.1
1
10
100
1000
Time t (s)
3
2006-11-13
