SEMICONDUCTOR
KRC116S~KRC122S
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
E
B
L
FEATURES
L
・Simplify Circuit Design.
D
・With Built-in Bias Resistors.
2
H
A
3
G
・Reduce a Quantity of Parts and Manufacturing Process.
1
Q
P
EQUIVALENT CIRCUIT
P
2.2
2.2
KRC118S
2.2
10
KRC119S
4.7
KRC120S
10
4.7
KRC121S
47
10
KRC122S
100
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
10
100
J
10
K
1
KRC117S
R1
R2(kΩ)
KRC116S
IN
R1(kΩ)
N
TYPE NO.
OUT
C
BIAS RESISTOR VALUES
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
M
1. EMITTER
2. BASE
R2
3. COLLECTOR
COMMON
SOT-23
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Output Voltage
SYMBOL
RATING
UNIT
VO
50
V
KRC116S～122S
KRC116S
10, -5
KRC117S
12, -10
KRC118S
12, -5
VI
KRC119S
Input Voltage
20, -7
KRC120S
30, -10
KRC121S
40, -15
KRC122S
40, -10
IO
Junction Temperature
Storage Temperature Range
200
mW
150
℃
Tstg
KRC116S～122S
mA
Tj
Power Dissipation
100
PD
Output Current
-55～150
℃
Marking
MARK SPEC
TYPE
MARK
2008. 10. 29
V
Lot No.
KRC116S KRC117S KRC118S KRC119S KRC120S KRC121S KRC122S
N2
N4
N5
Revision No : 5
N6
N7
N8
N9
Type Name
1/6
