DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1492
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK1492 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
FEATURES
• Low on-state resistance
RDS(on) = 0.1 Ω MAX. (VGS = 10 V, ID = 18 A)
• Low input capacitance Ciss = 3000 pF TYP.
• Built-in G-S gate protection diodes
• High avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
250
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC)
ID(DC)
±35
A
ID(pulse)
±140
A
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
PT
140
W
Channel Temperature
Tch
150
°C
Tstg
−55 to +150
°C
Single Avalanche Current
Note2
IAS
52.5
A
Single Avalanche Energy
Note2
EAS
2500
mJ
Storage Temperature
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D18443EJ2V0DS00 (2nd edition)
(Previous No. TC-2396)
Date Published November 2006 NS CP(K)
Printed in Japan
1993, 2006
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
