Bulletin I25173 rev. B 03/94
ST303S SERIES
Stud Version
INVERTER GRADE THYRISTORS
Features
300A
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
ST303S
Units
300
A
65
°C
471
A
@ 50Hz
7950
A
@ 60Hz
8320
A
@ 50Hz
316
KA2s
@ 60Hz
288
KA2s
VDRM /VRRM
400 to 1200
V
tq range (*)
10 to 30
µs
- 40 to 125
°C
IT(AV)
@ TC
IT(RMS)
ITSM
2
It
TJ
case style
TO-209AE (TO-118)
(*) t = 10 to 20µs for 400 to 800V devices
q
t = 15 to 30µs for 1000 to 1200V devices
q
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1
ST303S Series
Bulletin I25173 rev. B 03/94
On-state Conduction
Parameter
V TM
ST303S
Max. peak on-state voltage
Units
2.16
V T(TO)1 Low level value of threshold
1.44
voltage
V T(TO)2 High level value of threshold
voltage
ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse
V
0.57
rt 2
High level value of forward
slope resistance
0.56
IH
Maximum holding current
600
IL
Typical latching current
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x I T(AV)), TJ = TJ max.
1.46
Low level value of forward
slope resistance
1000
rt 1
Conditions
mΩ
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), T J = TJ max.
mA
T J = 25°C, I T > 30A
T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A
Switching
Parameter
di/dt
ST303S
Max. non-repetitive rate of rise
1000
of turned-on current
t
t
Typical delay time
d
Conditions
A/µs
TJ = TJ max, VDRM = rated VDRM
Min
10
Max
30
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp = 1µs
0.80
Max. turn-off time (*)
q
Units
µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
VR = 50V, tp = 500µs, dv/dt: see table in device code
(*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices.
q
q
Blocking
Parameter
ST303S
Units
Conditions
TJ = TJ max, linear to 80% VDRM, higher value
available on request
dv/dt
Maximum critical rate of rise of
off-state voltage
500
V/µs
IRRM
IDRM
Max. peak reverse and off-state
leakage current
50
mA
ST303S
Units
TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM
Maximum peak gate power
Conditions
60
10
IGM
Max. peak positive gate current
10
+VGM
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
VGT
Max. DC gate voltage required
A
TJ = TJ max, tp ≤ 5ms
T J = TJ max, tp ≤ 5ms
5
IGT
T J = TJ max, f = 50Hz, d% = 50
20
-V GM
W
V
PG(AV) Maximum average gate power
to trigger
200
mA
3
V
T J = 25°C, V A = 12V, Ra = 6Ω
IGD
Max. DC gate current not to trigger
20
mA
VGD
Max. DC gate voltage not to trigger
0.25
V
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T J = TJ max, rated VDRM applied
3
