2SK3730-01MR
FUJI POWER MOSFET
Trench Power MOSFET
N-CHANNEL SILICON POWER MOSFET
■Features
■Outline Drawings [mm]
■Equivalent circuit schematic
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
Drain (D)
■Applications
Gate (G)
Source (S)
Switching regulators
DC-DC converters
General purpose power amplifier
■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified)
Description
Symbol
Unit
VDS
75
V
VDSX
Drain-Source Voltage
Characteristics
40
Remarks
V
VGS=-20V
Continuous Drain Current
ID
±70
A
Pulsed Drain Current
IDP
±280
A
Gate-Source Voltage
VGS
±20
V
Non-Repetitive Maximum Avalanche current
IAS
70
A
Note*1
Non-Repetitive Maximum Avalanche Energy
EAS
251
mJ
Note*2
Maximum Power Dissipation
PD
70
W
Tch
150
℃
Tstg
-55 to +150
℃
Operating and Storage Temperature range
Note*1 : Tch≦150℃,See Fig.1 and Fig.2
Note*2 : Starting Tch=25℃,L=48μH,VCC=48V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to Avalanche Energy graph of page 4
■Electrical Characteristics at Tc=25℃(unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
Min.
Typ.
Max.
Unit
BVDSS
ID=1mA
VGS=0V
75
－
－
V
BVDSX
ID=1mA
VGS=-20V
40
－
－
V
Gate Threshold Voltage
VGS(th)
ID=10mA
VDS= VGS
2.5
3.0
3.5
V
－
1
100
IDSS
VDS= 75V
VGS=0V
Tch=25℃
Zero Gate Voltage Drain current
Tch=125℃
－
10
500
Drain-Source Breakdown Voltage
μA
Gate-Source Leakage current
IGSS
VGS= ±20V
VDS= 0V
－
10
100
nA
Drain-Source On-State Resistance
RDS(on)
ID=35A
VGS=10V
－
6.4
7.9
mΩ
http://www.fujielectric.co.jp/products/semiconductor/index.html
1
Jul. 2013
