TBN5085 Series
Semiconductor
Si NPN Transistor
Unit in mm
SOT-323
□ Applications
2.1±0.1
1.25±0.05
- VHF and UHF low noise amplifier
3
0.30±0.1
□ Features
1
1.30±0.1
2.0±0.2
- Wide band amplifier
2
- High gain bandwidth product
0.15±0.05
fT = 8 GHz at VCE = 10 V, IC = 20 mA
- High power gain
|S21|2 = 11.0 dB at VCE = 10 V, IC = 20 mA, f = 1 GHz
NF = 1.1 dB at VCE = 10 V, IC = 5 mA, f = 1 GHz
0~0.1
0.90±0.1
- Low noise figure
0.1 Min.
Pin Configuration
1. Base
2. Emitter
3. Collector
□ Absolute Maximum Ratings (TA = 25 ℃)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
BVCBO
20
V
Collector to Emitter Voltage
BVCEO
12
V
Emitter to Base Voltage
BVEBO
3
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
150
mW
Operating Junction Temperature
Tj
150
℃
Tstg
-65 ~ 150
℃
Storage Temperature
Caution : Electro Static Discharge sensitive device
1