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RN2901TE85L,FPBF

製品説明
仕様・特性

RN2901~RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901,RN2902,RN2903,RN2904,RN2905,RN2906 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1901 to RN1906 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2901 4.7 4.7 RN2902 10 10 RN2903 22 22 RN2904 47 47 RN2905 2.2 47 RN2906 4.7 47 US6 ― JEDEC ― JEITA 2-2J1A TOSHIBA Weight: 6.8 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Junction temperature Storage temperature range (Top View) Symbol RN2901 to 2906 RN2901 to 2904 RN2905, 2906 Collector current Collector power dissipation Equivalent Circuit Rating Unit VCBO −50 V VCEO −50 V −10 VEBO −5 V IC RN2901 to 2906 −100 mA PC * 200 mW Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Total rating 1 2010-07-09 RN2901~RN2906 (Q1, Q2 Common) 3 2010-07-09

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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