SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
VDS @ Tjmax
650
V
RDS(on)
0.38
Ω
ID
11
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
PG-TO220FP
PG-TO262
PG-TO220
• Extreme dv/dt rated
• High peak current capability
1
• Improved transconductance
2
3
P-TO220-3-31
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Marking
SPP11N60C3
PG-TO220
Q67040-S4395
11N60C3
SPI11N60C3
PG-TO262
Q67042-S4403
11N60C3
Q67040-S4408
11N60C3
SPA11N60C3
PG-TO220FP
11N60C3
SPA11N60C3E8185 PG-TO220
Maximum Ratings
Parameter
Symbol
Value
SPA
SPP_I
Continuous drain current
Unit
ID
A
TC = 25 °C
11
11 1)
TC = 100 °C
7
71)
33
33
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
340
340
EAR
0.6
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
11
11
A
Gate source voltage static
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
125
33
Operating and storage temperature
Tj , Tstg
Reverse diode dv/dt 7)
dv/dt
A
mJ
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Rev. 3 . 3
Page 1
-55...+150
15
W
°C
V/ns
2012-10-16
