2SC5810
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
•
Unit: mm
High DC current gain: hFE = 400 to 1000 (IC = 0.1 A)
•
Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)
•
High-speed switching: tf = 85 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VCBO
100
V
VCEX
80
VCEO
50
VEBO
7
DC
IC
1.0
Pulse
ICP
2.0
IB
0.1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
PC (Note 1)
2.0
1.0
V
V
A
A
W
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21
