HL8333G
ODE2052-00 (M)
Rev.0
Aug. 01, 2008
GaAlAs Laser Diode
Description
The HL8333G is a high-power 0.8 μm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is
suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
Features
Package Type
• HL8333G: G2
• Infrared light output: λp = 820 to 840 nm
• High power:
standard continuous operation at 40 mW (CW),
pulsed operation at 50 mW
• Built-in monitor photodiode
• Single longitudinal mode
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
Ratings
40
50 *
2
30
–10 to +60
–40 to +85
PO
PO(pulse)
VR(LD)
VR(PD)
Topr
Tstg
Unit
mW
mW
V
V
°C
°C
Note: Pulse condition : Pulse width = 1 μs, duty = 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Slope efficiency
Operating current
Symbol
Ith
ηs
IOP
Min
—
0.4
—
Typ
40
0.5
120
Max
70
0.9
160
Unit
mA
mW/mA
mA
θ//
7
10
14
°
Test Conditions
—
24 (mW) / (I(32mW) – I(8mW))
PO = 40 mW
PO = 40 mW, FWHM
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
θ⊥
18
22
32
°
PO = 40 mW, FWHM
AS
λp
—
820
5
830
—
840
μm
nm
PO = 4 mW, NA = 0.4
PO = 40 mW
Monitor current
IS
20
100
130
μA
PO = 4 mW, VR(PD) = 5 V
Rev.0 Aug. 01, 2008 page 1 of 4
