JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323
Plastic-Encapsulate Transistors
SOT-323
2SC4116
TRANSISTOR (NPN)
FEATURES
High voltage and high current
Excellent hFE linearity
High hFE
Low noise
Complementary to 2SA1586
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
150
mA
PC
Collector Power Dissipation
100
mW
TJ
Junction Temperature
150
℃
Tstg
Junction and Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=6V,IC=2mA
Collector-emitter saturation voltage
VCE(sat)
fT
Transition frequency
Collector output capacitance
Cob
Noise figure
NF
70
IC=100mA,IB=10mA
VCE=10V,IC=1mA,
700
0.25
V
80
VCB=10V,IE=0,f=1MHz
MHz
3.5
10
VCE=6V,Ic=0.1mA,
f=1KHZ,Rg=10KΩ
pF
dB
CLASSIFICATION OF hFE
O
Y
GR
BL
Range
70-140
120-240
200-400
350-700
Marking
LO
LY
LG
LL
Rank
A,May,2011
