2SK2961
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2SK2961
Relay Drive, Motor Drive and DC−DC Converter
Application
Low drain−source ON resistance
: RDS (ON) = 0.2 Ω (typ.)
High forward transfer admittance
Unit: mm
: |Yfs| = 2.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate−source voltage
VGSS
±20
V
(Note 1)
ID
2.0
Pulse (Note 1)
IDP
6.0
Drain power dissipation
PD
0.9
W
Channel temperature
Tch
150
°C
TOSHIBA
Storage temperature range
Tstg
−55 to 150
°C
Weight: 0.36 g (typ.)
DC
Drain current
A
JEDEC
TO-92MOD
JEITA
—
2-5J1C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
Max
Unit
Rth (ch−a)
138
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29
