GSD2004WS
Vishay Semiconductors
New Product
formerly General Semiconductor
High-Voltage Small-Signal Switching Diode
SOD-323
.012 (0.3)
.065 (1.65)
.076 (1.95)
Mounting Pad Layout
0.055
(1.40)
0.062
(1.60)
.006 (0.15)
max.
.004 (0.1)
max.
0.047 (1.20)
Dimensions in inches
and (millimeters)
.059 (1.5)
.043 (1.1)
Top View
.049 (1.25)
max.
.100 (2.55)
.112 (2.85)
Cathode Band
.010 (0.25)
min.
Mechanical Data
Features
Case: SOD-323 Plastic Package
Weight: approx. 0.004g
Marking Code: B6
Packaging Codes/Options:
D5/10K per 13” reel (8mm tape), 30K/box
D6/3K per 7” reel (8mm tape), 30K/box
• Silicon Epitaxial Planar Diode
• Fast switching diode,especially suited for
applications requiring high voltage capability
Maximum Ratings and Thermal Characteristics
Parameter
TA = 25°C unless otherwise noted
Symbol
Value
Unit
VR
240
V
Peak Repetitive Reverse Voltage
VRRM
300
V
Peak Repetitive Reverse Current
IRRM
200
mA
IF
225
mA
Peak Repetitive Forward Current
IFRM
625
mA
Non-Repetitive Peak Forward Current at tp = 1µs
at tp = 1s
IFSM
4.0
1.0
A
Power Dissipation
Ptot
200 (1)
mW
RΘJA
(1)
Continuous Reverse Voltage
Forward Current (continuous)
Typical Thermal Resistance Junction to Ambiant Air
650
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Device on Fiberglass Substrate, see layout on second page
Document Number 88202
14-May-02
www.vishay.com
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