JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SD667,2SD667A
TO-92L
TRANSISTOR (NPN)
FEATURES
Low Frequency Power Amplifier
Complementary Pair with 2SB647/A
1. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. BASE
Symbol
2. COLLECTOR
Parameter
VCBO
120
Collector-Emitter Voltage
Unit
V
Collector- Base Voltage
VCEO
Value
2SD667
80
2SD667A
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
900
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
Min
IE=10μA,IC=0
Typ
Max
Unit
120
V
2SD667
80
V
2SD667A
100
V
5
V
Collector cut-off current
ICBO
VCB=100V,IE=0
10
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
10
μA
hFE(1)
VCE=5V,IC=150mA
hFE(2)
VCE=5V,IC=500mA
2SD667
Collector-emitter saturation voltage
VCE(sat)
320
2SD667A
DC current gain
60
60
320
30
IC=500mA,IB=50mA
1
V
1.5
V
Base-emitter voltage
VBE
VCE=5V,IC=150mA
Transition frequency
fT
VCE=5V,IC=150mA
140
MHz
VCB=10V,IE=0,f=1MHz
12
pF
Collector output capacitance
CLASSIFICATION OF
Cob
hFE(1)
B
C
D
2SD667
60-120
100-200
160-320
2SD667A
60-120
100-200
160-320
Rank
Range
A,Jun,2011
