This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1450
Silicon NPN epitaxial planar type
For low-frequency amplification
Unit: mm
■ Features
4.0±0.2
7.6
(0.8)
3.0±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low collector-emitter saturation voltage VCE(sat)
2.0±0.2
(0.8)
0.75 max.
Symbol
Rating
Unit
VCBO
25
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
12
V
0.5
A
1
A
300
mW
150
°C
−55 to +150
°C
Collector current
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
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Parameter
Collector-base voltage (Emitter open)
15.6±0.5
■ Absolute Maximum Ratings Ta = 25°C
0.45+0.20
–0.10
0.45+0.20
–0.10
(2.5) (2.5)
1
2
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
3
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
12
V
ICBO
VCB = 25 V, IE = 0
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
VCE = 2 V, IC = 0.5 A
200
hFE2
VCE = 2 V, IC = 1 A
60
Collector-base cutoff current (Emitter open)
hFE1 *2
ce
/D
isc
on
tin
Forward current transfer ratio *1
Conditions
Base-emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 20 mA
ON resistance *3
int
100
0.13
nA
800
0.40
V
1.2
V
200
MHz
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
0.6
Ω
Ron
Ma
Unit
VCB = 10 V, IE = −50 mA, f = 200 MHz
Cob
en
Collector output capacitance
(Common base, input open circuited)
Max
V
IC = 500 mA, IB = 20 mA
fT
an
Transition frequency
*1
Typ
25
VBE(sat)
Collector-emitter saturation voltage *1
Min
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
T
No rank
hFE1
200 to 350
300 to 500
400 to 800
200 to 800
*3: Ron Measurement circuit
1 kΩ
IB = 1 mA
f = 1 kHz
V = 0.3 V
VB
Ron =
Publication date: April 2003
VV
VA
VB
× 1 000 (Ω)
VA − VB
SJC00222BED
1
