[Preliminary] This product is under development and its specification might be changed without any notice.
R1LV0816ASD -5SI, 7SI
8Mb Advanced LPSRAM (512k word x 16bit / 1M word x 8bit)
REJ03C0397-0001
Preliminary
Rev.0.01
2009.12.08
Description
The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV0816ASD is
suitable for memory applications where a simple interfacing, battery operating and battery backup are the
important design objectives.
The R1LV0816ASD is packaged in a 52pin thin small outline mount device [µTSOP/ 10.79mm x 10.49 mm
with the pin-pitch of 0.40mm]. It gives the best solution for a compaction of mounting area as well as
flexibility of wiring pattern of printed circuit boards.
Features
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Single 2.4-3.6V power supply
Small stand-by current: 1.2μA (Vcc=3.0V, typ.)
No clocks, No refresh
All inputs and outputs are TTL compatible
Easy memory expansion byCS2, CS1#, LB# and UB#
Common Data I/O
Three-state outputs: OR-tie capability
OE# prevents data contention in the I/O bus
Operation temperature: -40 ~ +85°C
Ordering information
Type No.
R1LV0816ASD-5SI
R1LV0816ASD-7SI
Power supply
Access time
2.7V to 3.6V
70 ns
70 ns
REJ03C0397-0001 Rev.0.01
Page 1 of 16
Package
-40 ~ +85°C
350 mil 52-pin plastic μ-TSOP (II)
(normal-bend type) (52PTG)
55 ns
2.4V to 2.7V
2.4V to 3.6V
Temperature
Range
2009.12.08
