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2SA1681
2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4409 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V Collector current IC −2 A Base current IB −0.2 A PC 500 Collector power dissipation PC (Note 1) Junction temperature Storage temperature range 1000 PW-MINI JEDEC ― Tj 150 °C Tstg −55 to 150 JEITA SC-62 TOSHIBA mW 2-5K1A °C Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
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