2SD313
Plastic-Encapsulate Transistors
NPN
TO-220
Features
Power dissipation
PCM:
1.75
W (Tamb=25℃)
Collector current
ICM:
3
A
Collector-base voltage
60
V
V(BR)CBO:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. BASE 2. COLLECTOR 3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA, IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=60V, IE=0
100
µA
Collector cut-off current
ICEO
VCE=60V, IE=0
1
mA
Emitter cut-off current
IEBO
VEB=4V, IC=0
100
µA
hFE(1)
VCE=2V, IC=1A
40
hFE(2)
VCE=2V, IC=0.1A
40
VCE(sat)
IC=2A, IB=200mA
1
V
Base-emitter voltage
VBE
VCE=2V, IC=1A
1.5
V
Transition frequency
fT
VCE=5V, IC=500mA
8
MHz
Cob
VCB=10V, IE=0,f=1MHz
65
pF
320
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
CLASSIFICATION OF hFE(1)
Rank
Range
C
D
E
F
40-80
60-120
100-200
160-320
