LX5506B
®
TM
InGaP HBT 4 – 6GHz Power Amplifier
P RODUCTION D ATA S HEET
KEY FEATURES
DESCRIPTION
Advanced InGaP HBT
Single-Polarity Voltage Supply
EVM ~ 2.5% at Pout=+18dBm,
64QAM/ 54Mbps OFDM (3.3V)
Power Gain ~ 25dB at 5.25GHz
& Pout=+18dBm
Power Gain ~ 21dB at 5.85GHz
& Pout=+18dBm
P1dB ~ +26dBm across 5.15 –
5.85 GHz
Total Current ~ 170mA for
Pout=+18dBm at 5.25GHz
Total Current ~ 200mA for
Pout=+20dBm at 5.25GHz
ACPR ~ -48dBc at 30MHz
Offset at Pout=+18dBm
Integrated Power Detector
Complete On-Chip Input Match
Simple Output Capacitor Match
Small Footprint: 3x3mm2
Low Profile: 0.9mm
bs
ol
et
e
supply of 3.3V (nominal), with
+26dBm of P1dB and up to 25dB
power gain in the 5.15 - 5.85GHz
frequency range with a simple output
matching capacitor pair.
LX5506B is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506B an ideal
solution for broadband, high-gain
power amplifier requirements for IEEE
802.11a, and HiperLAN2 portable
WLAN applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT HIGHLIGHT
WWW . Microsemi .C OM
The LX5506B is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.85
GHz frequency range. The PA is
implemented
as
a
three-stage
monolithic microwave integrated
circuit (MMIC) with active bias, onchip input matching and output prematching. It also features an on-chip
output power detector to help reduce
BOM cost and PCB board space for
system implementations. The device is
manufactured with an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) IC process (MOCVD).
It
operates with a single positive voltage
APPLICATIONS/BENEFITS
LQ
PACKAGE ORDER INFO
Plastic MLPQ
16-Pin
RoHS Compliant / Pb-free
LX5506B
LX5506B
O
FCC U-N11 Wireless
IEEE 802.11a
HiperLAN2
LX5506BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5506BLQ-TR)
This device is classified as ESD Level 0 in accordance with MIL-STD-883,
Method 3015 (HBM) testing. Appropriate ESD procedures should be
observed when handling this device.
Copyright © 2003
Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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