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部品型式

2SB643S

製品説明
仕様・特性

Transistors 2SB0643, 2SB0644 (2SB643, 2SB644) Silicon PNP epitaxial planar type For low-frequency general amplification Unit: mm 2.5±0.1 (1.0) (1.5) R 0.9 Unit −30 V (0.85) −60 2SB0644 Collector-emitter voltage 2SB0643 (Base open) 2SB0644 VCEO Emitter-base voltage (Collector open) VEBO 2.4±0.2 Rating VCBO 0.45±0.05 0.55±0.1 −25 1.25±0.05 Collector-base voltage (Emitter open) Symbol 2SB0643 1.0±0.1 Parameter d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / . ■ Absolute Maximum Ratings Ta = 25°C V −50 Collector current IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.0) (1.5) M Di ain sc te on na tin nc ue e/ d (0.4) 6.9±0.1 ■ Features −7 V − 0.5 A −1 1: Base 2: Collector 3: Emitter M-A1 Package °C −55 to +150 1 (2.5) mW 150 2 (2.5) A 600 3 °C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol 2SB0643 Conditions IC = −10 µA, IE = 0 Min Typ Max −30 Unit V 2SB0643 VCEO IC = −2 mA, IB = 0 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-Emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0 −1 µA 340  2SB0644 en an Collector-emitter voltage (Base open) ce /D isc on tin 2SB0644 ue Collector-base voltage (Emitter open) VCBO −60 −25 −50 −7 int 40 *1 Transition frequency VCE(sat) IC = −300 mA, IB = −30 mA *2 VCB = −10 V, IE = 10 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) V 85 VCE = −10 V, IC = −500 mA hFE1 Ma Collector-emitter saturation voltage VCE = −10 V, IC = −10 mA hFE2 Forward current transfer ratio *1 V VCB = −10 V, IE = 0, f = 1 MHz Cob  90 − 0.35 − 0.6 200 6 V MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2003 SJC00046CED 1

ブランド

PANASONIC

会社名

パナソニック株式会社

本社国名

日本

事業概要

電子デバイス・産業用機器 受動部品、接続部品、センサ、変換部品、産業デバイス、プリント配線板/モジュール、素材・材料、半導体、記憶デバイス、電池・エネルギー機器、FA(実装、溶接、計測)、モータ・コンプレッサ

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