MOTOROLA
Order this document
by MRF151/D
SEMICONDUCTOR TECHNICAL DATA
RF Power Field-Effect Transistor
MRF151
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
ARCHIVE INFORMATION
• Guaranteed Performance at 30 MHz, 50 V:
Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%
150 W, 50 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
• Typical Performance at 175 MHz, 50 V:
Output Power — 150 W
Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
• S–Parameters Available for Download into Frequency
Domain Simulators. See http://motorola.com/sps/rf/designtds/
D
G
CASE 211–11, STYLE 2
S
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
125
Vdc
Drain–Gate Voltage
VDGO
125
Vdc
VGS
±40
Vdc
Drain Current — Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
300
1.71
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
0.6
°C/W
Gate–Source Voltage
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
MOTOROLA RF
© Motorola, Inc. 1999 DEVICE DATA
MRF151
1
PRODUCT TRANSFERRED TO M/A–COM
The RF MOSFET Line