CPH6341
Ordering number : ENA1084A
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
CPH6341
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance
High-speed switching
4V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
A
--20
Tstg
A
1.6
When mounted on ceramic substrate (900mm2×0.8mm)
PD
Tch
V
-5
PW≤10μs, duty cycle≤1%
V
±20
ID
IDP
Drain Current (Pulse)
Unit
--30
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-003
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
4
Packing Type: TL
Marking
0.9
1
2
0.95
LOT No.
YT
0.05
1.6
0.2
0.6
2.8
0.2
0.6
5
CPH6341-TL-E
0.15
2.9
6
TL
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Electrical Connection
1, 2, 5, 6
SANYO : CPH6
3
4
http://semicon.sanyo.com/en/network
61312 TKIM/30508PE TIIM TC-00001220 No. A1084-1/7
