RN2301~RN2306
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2301,RN2302,RN2303
RN2304,RN2305,RN2306
Unit: mm
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1301to1306
Equivalent Circuit
Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2301
4.7
4.7
RN2302
10
10
RN2303
22
22
RN2304
47
47
RN2305
2.2
47
RN2306
4.7
47
USM
JEDEC
JEITA
TOSHIBA
Weight: 0.006g
―
SC-70
2-2E1A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
RN2301~2306
RN2301~2304
RN2305, 2306
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Rating
Unit
VCBO
−50
V
VCEO
−50
V
−10
VEBO
−5
V
IC
RN2301~2306
−100
mA
PC
100
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-03-16
