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2SK3264
2SK3264-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source Equivalent circuit schematic Drain(D) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 800 ±7 ±28 ±35 378.3 60 +150 -55 to +150 Unit V A A V mJ W °C °C Gate(G) Source(S) . 種e 機 d n sig 行r new 移 fo *1 L=14.2mH, Vcc=80V 守mend 保m Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage ot N Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) eco r IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=±35V VDS=0V ID=3.5A VGS=10V 800 3.5 Tch=25°C Tch=125°C ID=3.5A VDS=25V VDS =25V VGS=0V f=1MHz 2.0 VCC=600V ID=7A VGS=10V RGS=10 Ω L=14.2mH Tch=25°C IF=2xID VGS=0V Tch=25°C IF=ID VGS=0V -di/dt=100A/µs Tch=25°C Typ. Max. Units 4.0 4.5 10 500 0.2 1.0 10 100 1.62 2.0 4.0 900 1350 130 200 70 110 25 40 90 140 80 120 50 80 7 1.0 900 10 1.5 V V µA mA nA Ω S pF ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. Units 2.083 62.5 °C/W °C/W 1
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