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部品型式

RN2412TE85L,F

製品説明
仕様・特性

RN2412,RN2413 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2412, RN2413 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1412, RN1413 Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characterisstic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range TO-236MOD JEDEC SC-59 JEITA 2-3F1A TOSHIBA Weight: 0.012g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― Emitter cut-off current IEBO DC current gain Characteristic Collector output capacitance Input resistor RN2412 RN2413 Typ. Max Unit VCB = −50 V, IE = 0 ― ― −100 nA ― VEB = −5 V, IC = 0 ― ― −100 nA ― VCE = −5 V, IC = −1 mA 120 ― 400 ― VCE (sat) ― IC = −5 mA, IB = −0.25 mA ― −0.1 −0.3 V fT Translation frequency Min hFE Collector-emitter saturation voltage Test Condition ― VCE = −10 V, IC = −5 mA ― 200 ― MHz Cob ― VCB = −10 V, IE = 0, f = 1 MHz ― 3 6 pF R1 ― ― 15.4 22 28.6 32.9 47 61.1 1 kΩ 2007-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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