TN2504
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSS /
RDS(ON)
VGS(th)
ID(ON)
BVDGS
(max)
(max)
(min)
TO-243AA*
Die†
40V
1.0Ω
1.6V
4.0A
TN2504N8
TN2504ND
*Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
†
MIL visual screening available.
Features
Low Threshold DMOS Technology
Low threshold — 1.6V max.
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Low input and output leakage
Complementary N- and P-channel devices
Applications
Package Options
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
D
Telecom switches
G
D
S
TO-243AA
(SOT-89)
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
7-87
