2SA1667/1668
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382)
–200
VCB=
VEBO
–6
V
IEBO
IC
–2
A
V(BR)CEO
µA
–150
ICBO
V
–10max
–200
10.1±0.2
V
µA
–10max
VEB=–6V
–150min
IC=–25mA
–200min
hFE
VCE=–10V, IC=–0.7A
60min
W
VCE(sat)
IC=–0.7A, IB=–0.07A
–1.0max
V
Tj
150
°C
fT
VCE=–12V, IE=0.2A
20typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
60typ
pF
Tstg
3.9
A
25(Tc=25°C)
13.0min
–1
PC
ø3.3±0.2
a
b
V
IB
4.2±0.2
2.8 c0.5
4.0±0.2
V
Unit
–10max
Conditions
Symbol
External Dimensions FM20 (TO220F)
0.8±0.2
–150
Unit
(Ta=25°C)
Ratings
2SA1667
2SA1668
±0.2
VCEO
sElectrical Characteristics
8.4±0.2
Ratings
Symbol
2SA1667 2SA1668
VCBO
–150
–200
16.9±0.3
sAbsolute maximum ratings (Ta=25°C)
Application : TV Vertical Output, Audio Output Driver and General Purpose
1.35±0.15
1.35±0.15
sTypical Switching Characteristics (Common Emitter)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.4±0.2
2.2±0.2
–100
–0.4
0
–2
–4
–6
–8
–1
–10
–100
(V C E =–10V)
400
100
–0.1
–1
Transient Thermal Resistance
D C Cur r ent Gai n h F E
Typ
25˚C
–30˚C
100
30
–0.01
–2
Collector Current I C (A)
–0.1
–1
–2
0.5
1
2
Temp)
at
0x
he
si
nk
–100
1 00x 1 0
10
ite
–10
Collector-Emitter Voltage V C E (V)
150x150x2
fin
1
In
Without Heatsink
Natural Cooling
1.2SA1667
2.2SA1668
20
ith
M aximu m Power Dissipat io n P C (W)
C
W
Collector Curr ent I C (A)
s
2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
s
ms
1
–0.01
–1
1000
P c – T a Derating
–0.1
10
–1.2
100
1m
20
5m
D
–1
20
)
10
25
40
–1.0
Time t(ms)
–5
30
–0.8
1
Safe Operating Area (Single Pulse)
Typ
–0.6
5
(V C E =–12V)
0.1
–0.4
Collector Current I C (A)
f T – I E Characteristics (Typical)
Cut- off Fr equ ency f T (M H Z )
D C Cur r ent Gai n h F E
125˚C
Emitter Current I E (A)
–0.2
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
400
50
0
Base-Emittor Voltage V B E (V)
(V C E =–10V)
0
0.01
0
–1000
Base Current I B (mA)
h FE – I C Characteristics (Typical)
40
–0.01
–0.8
–0.4
I C =–2A
–2
–1.2
–1A
–0 .5A
Collector-Emitter Voltage V C E (V)
–1.6
(Case
–2
0
–10
–2
–30˚C
I B =–5mA/Step
(V C E =–10V)
–3
Temp
–1.2
I C – V BE Temperature Characteristics (Typical)
mp)
Collector Current I C (A)
–1.6
0
0.5typ
(Case
A
–0.8
1.5typ
B C E
e Te
Collector-Emitter Saturation Voltage V C E (s at) (V )
–2.0
–5
0.4typ
Weight : Approx 2.0g
a. Part No.
b. Lot No.
tf
(µs)
V CE ( sa t ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
0m
100
tstg
(µs)
(Cas
5
–10
ton
(µs)
IB2
(mA)
25˚C
–1
20
IB1
(mA)
125˚C
–20
VBB2
(V)
VBB1
(V)
Collector Current I C (A)
IC
(A)
RL
(Ω)
θ j- a (˚C /W )
VCC
(V)
50x50x2
Without Heatsink
2
2
–300
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
25
