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FM25V20-DG

製品説明
仕様・特性

FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM  Organized as 256K x 8 bits  High Endurance 100 Trillion (1014) Read/Writes  10 Year Data Retention  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI  Up to 40 MHz Frequency  Direct Hardware Replacement for Serial Flash  SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme  Hardware Protection  Software Protection Description The FM25V20 is a 2-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Device ID  Device ID reads out Manufacturer ID & Part ID Low Voltage, Low Power  Low Voltage Operation 2.0V – 3.6V  100 A Standby Current (typ.)  3 A Sleep Mode Current (typ.) Industry Standard Configurations  Industrial Temperature -40C to +85C  8-pin “Green”/RoHS EIAJ SOIC Package  8-pin “Green”/RoHS TDFN Package  8-pin “Green”/POHS PDIP Package Device ID that allows the host to determine the manufacturer, product density, and product revision. The device is guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration Top View /S These capabilities make the FM25V20 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding controls where the long write time of Serial Flash can cause data loss. The FM25V20 provides substantial benefits to users of Serial Flash as a hardware drop-in replacement. The device uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device incorporates a read-only This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s internal qualification testing and has reached production status. Rev. 3.0 August 2012 8 VDD 2 7 /HOLD /W 3 6 C VSS Unlike Serial Flash, the FM25V20 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may commence without the need for data polling. The product offers very high write endurance, orders of magnitude more endurance than Serial Flash. Also, F-RAM exhibits lower power consumption than Serial Flash. 1 Q 4 5 D S 1 8 VDD Q 2 7 HOLD W 3 6 C VSS 4 5 D Pin Name Function /S /W /HOLD C D Q VDD VSS Chip Select Write Protect Hold Serial Clock Serial Data Input Serial Data Output Supply Voltage Ground Ramtron International Corporation 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com Page 1 of 17

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