SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
AC POWER CONTROL APPLICATIONS
Unit: mm
l IT (RMS) = 1A (Ta = 65°C without radiator)
l Gate Trigger Current
: IGT = 5mA Max. (TYPE “A”)
l Repetitive Peak Off−State Voltage : VDRM = 400V, 600V
l R.M.S On−State Current
: IT (RMS) = 2A (Tc = 110°C)
l Isolation Voltage
: VISOL = 1500V (AC, t = 60s)
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SM2GZ47
SM2GZ47A
R.M.S On−State
Current
(Full Sine Waveform)
Tc = 110°C
SM2JZ47
SM2JZ47A
Ta = 65°C
Peak One Cycle Surge On−State
Current (Non−Repetitive)
2
UNIT
400
VDRM
V
600
IT (RMS)
2
A
1
8 (50Hz)
ITSM
8.8 (60Hz)
2
I t Limit Value
RATING
A
2
I t
0.32
A s
PGM
3
W
PG (AV)
0.3
W
Peak Gate Voltage
VFGM
10
V
Peak Gate Current
IGM
1.6
JEDEC
―
JEITA
―
TOSHIBA
13−10H1A
Weight: 1.7g (Typ.)
A
Peak Gate Power Dissipation
Average Gate Power Dissipation
Junction Temperature
Tj
°C
−40~125
°C
VISOL
Isolation Voltage (AC, t = 1min.)
−40~125
Tstg
Storage Temperature Range
1500
V
MARKING
NUMBER
*1
SYMBOL
MARK
SM2GZ47, SM2GZ47A
*2
M2GZ47
SM2JZ47, SM2JZ47A
TYPE
M2JZ47
SM2GZ47A, SM2JZ47A
A
Example
8A : January 1998
8B : February 1998
8L : December 1998
*3
1
2001-07-10
