10DL2CZ47A,10FL2CZ47A,10GL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
10DL2CZ47A, 10FL2CZ47A, 10GL2CZ47A
Unit in mm
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
•
Repetitive Peak Reverse Voltage
•
Average Output Rectified Current : IO = 10 A
•
Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max)
Low Switching Losses and Output Noise
•
: VRRM = 200 V, 300 V, 400 V
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
10DL2CZ47A
Repetitive Peak
Reverse Voltage
10FL2CZ47A
RATING
UNIT
200
VRRM
V
300
400
10GL2CZ47A
Average Output Rectified Current
IO
10
Peak One Cycle Surge Forward
Current (Sine Wave)
IFSM
A
50 (50Hz)
55 (60Hz)
A
Junction Temperature
Tj
−40~150
°C
Storage Temperature Range
Tstg
−40~150
°C
0.6
JEDEC
JEITA
TOSHIBA
―
―
12-10C1A
N·m
Screw Torque
―
Weight : 2.0g
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
―
―
0.98
―
―
1.3
10GL2CZ47A
―
―
1.8
10DL2CZ47A
―
―
10
―
―
10
―
―
50
10DL2CZ47A
Peak Forward
Voltage
(Note 1)
Repetitive Peak
Reverse Current
(Note 1)
10FL2CZ47A
10FL2CZ47A
VFM
IRRM
IFM=5A
VRRM=Rated
10GL2CZ47A
UNIT
V
μA
Reverse Recovery Time
(Note 1)
trr
IF=2A, di / dt=−20A / μs
―
―
―
ns
Forward Recovery Time
(Note 1)
tfr
IF=1A
―
―
―
ns
Rth (j-c)
Total DC, Junction to Case
―
―
―
°C / W
Thermal Resistance
Note 1 : A value applied to one cell.
1
2006-11-08